Semiconductor device with discharge path, and method for producing the same

A method for producing a semiconductor device, comprising:

• preparing a first substrate having a first surface;
• forming a sensing part in the first substrate adjacent to the first surface;
• preparing a second substrate having a second surface;
• forming an insulating film on at least one of the first substrate and the second substrate;
• bonding the first surface of the first substrate and the second surface of the second substrate through the insulating film to provide a hermetically sealed chamber between the first substrate and the second substrate and to enclose the sensing part including a vibrator in the hermetically sealed chamber;
• forming a through hole in the second substrate and the insulating film in a stacking direction of the first substrate and the second substrate to expose the first surface of the first substrate;
• forming a penetrating electrode in the through hole to be electrically connected to the sensing part;
• and
• before the bonding, forming a recess at a position that is to be located between the hermetically sealed chamber and the through hole in the bonding and the forming of the through hole, wherein
• in the bonding, the first surface of the first substrate and the second surface of the second substrate are bonded through the insulating film so that a discharge path is provided by the recess at the position that is to be located between the hermetically sealed chamber and the through hole in the forming of the through hole,
• the method further comprising:
• after the forming of the through hole and before the forming of the penetrating electrode, performing a heat treatment to release outgas, which is generated in the bonding, from the hermetically sealed chamber to the through hole through the discharge path.