US 10,974,960 B1Granted

Method for obtaining semiconducting carbon nanotube

AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.

InventorsKe Zhang, Yuan-Qi Wei, Kai-Li Jiang, Shou-Shan Fan

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Abstract

A method for obtaining semiconducting carbon nanotubes is provided. An insulating substrate comprising hollow portions and non-hollow portions is provided. A plurality of electrodes is formed on a surface of the non-hollow portions. A plurality of carbon nanotubes is formed on a surface of the insulating substrate, and the carbon nanotubes stretches across the hollow portions. The insulating substrate, the plurality of electrodes, and the carbon nanotubes are placed into a cavity, and the cavity is evacuated. A voltage is applied between any two electrodes, and photos of carbon nanotubes suspended between the two electrodes are taken. In the photo, darker ones are the semiconducting carbon nanotubes, and brighter ones are metallic carbon nanotubes. Finally, the metallic carbon nanotubes are removed.

Claims20

Dependent claims

A method for obtaining semiconducting carbon nanotubes, the method comprising:

S1:
providing an insulating substrate, wherein the insulating substrate defines a plurality of hollow portions and a plurality of non-hollow portions alternately distributed;
and forming a plurality of electrodes on a surface of the plurality of non-hollow portions, wherein the plurality of electrodes is separated by the plurality of hollow portions;
S2:
forming a plurality of carbon nanotubes on a surface of the insulating substrate, wherein the plurality of carbon nanotubes is parallel to and spaced from each other and in direct contact with the plurality of electrodes, the plurality of carbon nanotubes gets across the plurality of hollow portions, and a portion of each of the plurality of carbon nanotubes located in the hollow portion is suspended;
S3:
placing the insulating substrate, the plurality of electrodes, and the plurality of carbon nanotubes into a cavity, and then evacuating the cavity;
S4:
applying a voltage via any two electrodes of the plurality of electrodes;
and taking a photo of carbon nanotubes suspended between the two electrodes with a camera, to obtain the photo of the carbon nanotubes suspended between the two electrodes, wherein in the photo, darker carbon nanotubes are the semiconducting carbon nanotubes, and brighter carbon nanotubes are metallic carbon nanotubes;
and
S5:
removing the metallic carbon nanotubes to obtain the semiconducting carbon nanotubes.

10 more elements

A method for identifying semiconducting carbon nanotubes, the method comprising:

providing an insulating substrate, wherein the insulating substrate defines a plurality of hollow portions and a plurality of non-hollow portions alternately distributed;
and forming a plurality of electrodes on a surface of the plurality of non-hollow portions, wherein the plurality of electrodes is separated by the plurality of hollow portions;
forming a plurality of carbon nanotubes on a surface of the insulating substrate, wherein the plurality of carbon nanotubes is parallel to and spaced from each other and in direct contact with the plurality of electrodes, the plurality of carbon nanotubes gets across the plurality of hollow portions, and a portion of each of the plurality of carbon nanotubes located in the hollow portion is suspended;
placing the insulating substrate, the plurality of electrodes, and the plurality of carbon nanotubes into a cavity, and then evacuating the cavity;
and
applying a voltage via any two electrodes of the plurality of electrodes;
and taking a photo of carbon nanotubes suspended between the two electrodes with a camera, to obtain the photo of the carbon nanotubes suspended between the two electrodes, wherein in the photo, darker carbon nanotubes are the semiconducting carbon nanotubes, and brighter carbon nanotubes are metallic carbon nanotubes.

4 more elements

Dependencies are inferred from the claim text.