Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorKang Sik Choi
Life of this patent
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Abstract
A semiconductor device and a manufacturing method thereof includes a source contact structure, a gate stack structure including a side region adjacent to the source contact structure, and a center region extending from the side region. The semiconductor device further includes a source gate pattern disposed under the side region of the first gate stack structure. The source gate pattern has an inclined surface facing the source contact structure. The semiconductor device also includes a channel pattern penetrating the center region of the gate stack structure, the channel pattern extending toward and contacting the source contact structure.
Claims28
A semiconductor device comprising:
- a source contact structure extending along a first direction;
- a first gate stack structure disposed on a first side of the source contact structure, the first gate stack structure including a side region adjacent to the first side of the source contact structure and including a center region, opposite the source contact structure, extending from the side region of the first gate stack structure;
- a first source gate pattern disposed under the side region of the first gate stack structure, the first source gate pattern comprising an inclined surface facing the source contact structure;
- and
- a first channel pattern extending along an underside of the center region of the first stack structure, penetrating the center region of the first stack structure, and extending toward and contacting the first side of the source contact structure.
A semiconductor device comprising:
- source contact structures;
- source gate patterns disposed between the source contact structures and spaced apart from each other;
- a gate stack structure disposed between the source contact structures, the gate stack structure including side regions aligned above the source gate patterns and a center region between the side regions;
- a spacer insulating layer disposed between each of the source contact structures and the gate stack structure;
- a protective pattern aligned under the spacer insulating layer, the protective pattern being disposed between the source contact structure and the source gate pattern;
- and
- a channel pattern penetrating the gate stack structure, extending along a bottom surface of the gate stack structure, extending along surfaces of the source gate patterns, and extending along a bottom surface of the protective pattern, the channel pattern having source contact surfaces in contact with the source contact structures.
Dependencies are inferred from the claim text.