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US 10,950,605 B2Granted
Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy Liaw
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first transistor. The first transistor includes a first terminal, a first contact, a second terminal, and a second contact. The first contact is electrically connected to the first terminal, and the shape of the first contact is circular. The second contact is electrically connected to the second terminal and a ground terminal, and the shape of the second contact is rectangular.
Claims20
A semiconductor device, comprising:
- a first fin extending in a first direction and having a first source and a first drain;
- a gate extending a second direction perpendicular to the first direction, wherein the first source and the first drain are respectively on opposite sides of the gate when viewed from above;
- a first source contact in contact with the first source and laterally extending beyond a longitudinal end of the gate when viewed in a first cross-section taken along the second direction;
- and
- a first drain contact in contact with the first drain when viewed in a second cross-section taken along the second direction, wherein when viewed from above, the first source contact forms a first rectangular pattern and the first drain contact forms a first circular pattern.
2 more elements
A semiconductor device, comprising:
- a first fin extending in a first direction and having a first source and a first drain;
- a gate extending a second direction perpendicular to the first direction, wherein the first source and the first drain are respectively on opposite sides of the gate when viewed from above;
- a first drain contact in contact with the first drain when viewed in a cross-section taken along the second direction;
- a drain via in contact with the first drain contact when viewed in the cross-section taken along the second direction, wherein when viewed from above, the first drain contact and the drain via form first and second circular patterns overlapping at the first drain of the first fin;
- a first metal line in contact with the drain via and extending in the first direction;
- a first source contact directly connected to the first source and electrically connected to a ground terminal, wherein when viewed from above the first source contact forms a first rectangular pattern;
- a source via in contact with the first source contact;
- and
- a second metal line in contact with the source via and extending in the first direction, wherein the first source contact extending past a longitudinal side of the first metal line and a longitudinal side of the second metal line from a top view.
6 more elements
A semiconductor device, comprising:
- a fin extending in a first direction and having a source and a drain;
- a gate extending a second direction perpendicular to the first direction, wherein the source and the drain are respectively on opposite sides of the gate when viewed from above;
- a source contact and a drain contact respectively overlapping the source and the drain of the fin, wherein when viewed from above the source contact has a rectangular top surface, and the drain contact has a circular top surface, and the rectangular top surface of the source contact is on the same level with the circular top surface of the drain contact when viewed in a cross section taken along the second direction;
- and
- first and second high-k dielectric layers respectively laterally surrounding the source and drain contacts.
2 more elements
Dependencies are inferred from the claim text.