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US 10,931,274 B2Granted
Temperature-sensitive bias circuit
AssigneeGlobalFoundries U.S. Inc.
InventorsAnthony K. Stamper, Vibhor Jain
Life of this patent
Estimating the term…
Abstract
One illustrative device includes, among other things, an active device comprising a first terminal, a first bias resistor connected to the first terminal, and a first resistor comprising a first phase transition material connected in parallel with the first bias transistor, wherein the first phase transition material exhibits a first low conductivity phase for temperatures less than a first phase transition temperature and a first high conductivity phase for temperatures greater than the first phase transition temperature.
Claims19
A device, comprising:
- an active device comprising a first terminal;
- a first bias resistor connected to the first terminal;
- and
- a first resistor comprising a first phase transition material connected in parallel with the first bias resistor, wherein the first phase transition material exhibits a first low conductivity phase for temperatures less than a first phase transition temperature and a first high conductivity phase for temperatures greater than the first phase transition temperature.
1 more element
A device, comprising:
- an active device comprising a first terminal;
- a first bias resistor connected to the first terminal;
- a first resistor comprising a first phase transition material connected in parallel with the first bias resistor, wherein the first phase transition material exhibits a first low conductivity phase for temperatures less than a first phase transition temperature and a first high conductivity phase for temperatures greater than the first phase transition temperature;
- a second bias resistor connected in series to the first bias resistor;
- and
- a second resistor comprising a second phase transition material connected in parallel with the second bias resistor, wherein the second phase transition material exhibits a second low conductivity phase for temperatures less than a second phase transition temperature and a second high conductivity phase for temperatures greater than the second phase transition temperature, wherein the first phase transition temperature is different than the second phase transition temperature.
3 more elements
A method, comprising:
- connecting a bias circuit to a base terminal of a bipolar transistor;
- and
- reducing a resistance of the bias circuit responsive to a temperature of the bias circuit exceeding a first predetermined temperature.
Dependencies are inferred from the claim text.