Methods for evaluating resist development
AssigneeASML Netherlands B.V.
InventorPeng Liu
Life of this patent
Estimating the term…
Abstract
A method, including: obtaining a set of conditions for a resist development model for simulating a resist development process of a resist layer; and performing, by a hardware computer system, a computer simulation of the resist development process using the set of conditions and the resist development model to obtain a characteristic of the development of the resist layer, wherein the computer simulation separately simulates different certain different physical and chemical processes and characteristics of the resist development process.
Claims20
A method, comprising:
- obtaining a set of conditions for a resist development model for simulating a resist development process of a resist layer;
- and
- performing, by a hardware computer system, a computer simulation of the resist development process using the set of conditions and the resist development model to obtain a characteristic of the development of the resist layer, wherein the computer simulation is configured to simulate a first physical or chemical process or characteristic of the resist development process independently from a second different physical or chemical process or characteristic of the resist development process and to separately simulate the second physical or chemical process or characteristic of the resist development process independently from the first physical or chemical process or characteristic of the resist development process.
A non-transitory computer program product comprising machine-readable instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
- obtain a set of conditions for a resist development model for simulating a resist development process of a resist layer;
- and
- perform a computer simulation of the resist development process using the set of conditions and the resist development model to obtain a characteristic of the development of the resist layer, wherein the computer simulation is configured to simulate a first physical or chemical process or characteristic of the resist development process independently from a second different physical or chemical process or characteristic of the resist development process and to separately simulate the second physical or chemical process or characteristic of the resist development process independently from the first physical or chemical process or characteristic of the resist development process.
Dependencies are inferred from the claim text.