Quantum dot light-emitting diode devices and manufacturing methods, apparatuses thereof

A method of manufacturing a quantum dot light-emitting diode device, comprising:

• dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution;
• depositing the first mixed solution on one surface of a formed quantum dot light-emitting layer to form an electron transport layer containing the polyelectrolyte and the nanoparticles;
• wherein end groups carried by at least a portion of the polyelectrolyte are capable of filling surface defects of the nanoparticles in the electron transport layer;
• wherein the dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution comprises the steps of:
• dissolving the polyelectrolyte with a first solvent to obtain a first solution;
• dissolving the nanoparticles having inorganic semiconductor properties with a second solvent to obtain a second solution;
• and
• mixing the first solution with the second solution to form the first mixed solution.