Deposition mask and mask assembly including the same

A deposition mask, comprising:

• a patterning region provided with a pattern portion;
• and
• a plurality of bonding regions provided near opposite ends of the patterning region in a first direction,
• wherein the pattern portion comprises:
• a first pattern portion, in which first pattern holes are defined;
• and
• a plurality of second pattern portions, in which second pattern holes are defined, and which are located between opposite ends of the first pattern portion and the bonding regions in the first direction,
• wherein a second distance, which is a minimum distance between adjacent ones of the second pattern holes, is larger than a first distance, which is a minimum distance between adjacent ones of the first pattern holes,
• wherein each of the second pattern portions comprises:
• a first portion, which is provided adjacent to a bonding region of the bonding regions, and in which the second pattern holes are defined;
• a second portion, which is provided between the first portion and the first pattern portion, and in which the first pattern holes are defined;
• and
• a third portion, which is provided between the first portion and the bonding region, and in which third pattern holes are defined,
• wherein a third distance, which is a minimum distance between adjacent ones of the third pattern holes, is larger than the second distance.

A deposition mask, comprising:

• a patterning region provided with a pattern portion;
• and
• a plurality of bonding regions provided near opposite ends of the patterning region in a first direction,
• wherein the pattern portion comprises:
• a first pattern portion, in which first pattern holes are defined;
• and
• a plurality of second pattern portions, in which second pattern holes are defined, and which are located between opposite ends of the first pattern portion and the bonding regions in the first direction,
• wherein a second distance, which is a minimum distance between adjacent ones of the second pattern holes, is larger than a first distance, which is a minimum distance between adjacent ones of the first pattern holes,
• wherein the first pattern portion comprises:
• a plurality of deposition parts, which are spaced apart from each other in the first direction, and in which the first pattern holes are defined;
• and
• at least one blocking part provided between the deposition parts, wherein a plurality of fourth pattern holes are defined in the blocking part, and
• a size of each of the fourth pattern holes is less than a size of each of the first pattern holes.

A mask assembly, comprising:

• a frame set;
• and
• a plurality of deposition masks disposed on the frame set, each of the plurality of deposition masks extending in a first direction,
• wherein the frame set comprises:
• a support frame;
• and
• a plurality of support bars, which extend in a second direction crossing the first direction and are arranged in the first direction, opposite ends of each of the plurality of support bars in the second direction being coupled to the support frame,
• wherein each of the deposition masks comprises:
• a plurality of bonding regions, which are spaced apart from each other in the first direction and are fixed to the support frame;
• and
• a patterning region, which is provided between the bonding regions and in which a pattern portion is disposed,
• wherein the pattern portion comprises:
• a first pattern portion, which is provided to overlap a center of the pattern portion, and in which a plurality of first pattern holes are defined;
• and
• a plurality of second pattern portions, which are provided between opposite ends of the first pattern portion and the bonding regions in the first direction, a plurality of second pattern holes being defined in at least a region of each of the plurality of second pattern portions, the second pattern holes forming a plurality of rows arranged in the first direction, each of the second pattern holes in even numbered rows being shifted in the second direction from a corresponding one of the second pattern holes in odd numbered rows,
• wherein a minimum distance between adjacent ones of the second pattern holes is larger than a minimum distance between adjacent ones of the first pattern holes.

A deposition mask, comprising:

• a patterning region, in which a plurality of pattern holes are defined;
• and
• a plurality of bonding regions provided near opposite ends of the patterning region in a first direction,
• wherein a minimum distance between adjacent ones of the pattern holes, which are defined in portions of the patterning region adjacent to the bonding regions, is larger than a minimum distance between adjacent ones of the pattern holes, which are defined in another portion of the patterning region other than the portions, the pattern holes in the portions forming a plurality of rows arranged in the first direction, each of the pattern holes in even numbered rows being shifted in a second direction from a corresponding one of the pattern holes in odd numbered rows.

A deposition mask, comprising:

• a patterning region including a pattern portion;
• and
• a plurality of bonding regions provided near opposite ends of the patterning region in a first direction,
• wherein the pattern portion comprises:
• a first pattern portion, in which pattern holes in a first arrangement structure are defined;
• and
• a plurality of second pattern portions, pattern holes in a second arrangement structure being defined in at least a portion of the plurality of second pattern portions,
• wherein a minimum distance between the pattern holes in the second arrangement structure is larger than a minimum distance between the pattern holes in the first arrangement structure, the pattern holes in the second arrangement structure forming a plurality of rows arranged in the first direction, each of the pattern holes in even numbered rows being shifted in a second direction from a corresponding one of the pattern holes in odd numbered rows.