Formation of correlated electron material (CEM) device via dopant deposition and anneal

A method of constructing a switching device, comprising:

• depositing in a chamber one or more layers of a first material over a conductive substrate;
• depositing one or more layers of a second material having an atomic concentration of metal atoms over the one or more layers of the first material;
• depositing one or more layers of a third material over the one or more layers of the second material;
• and
• annealing the one or more layers of the first material, the one or more layers of the second material and the one or more layers of the third material to diffuse one or more dopants from the one or more layers of the first material and the one or more layers of the third material into the one or more layers of the second material to form a first correlated electron material (CEM) and to impart a particular distribution of an atomic concentration of the one or more dopants within the one or more layers of the second material to provide a switching capability.