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US 10,873,013 B2Granted
Passivation for a semiconductor light emitting device
AssigneeLumileds LLC
InventorsFrederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Abstract
In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
Claims14
A device comprising:
- a semiconductor structure comprising a light emitting layer between an n-type region and a p-type region, the semiconductor structure divided into a plurality of light-emitting devices (LEDs) separated by a gap between adjacent LEDs of the plurality of LEDs,
- each of the plurality of LEDs comprising an n-contact electrically coupled to the n-type region;
- and
- a multilayer stack at least in the gap between the adjacent LEDs, the multilayer stack comprising at least a first layer having a first refractive index and a second layer having a second refractive index.
1 more element
Dependencies are inferred from the claim text.