Semiconductor die having a first light-emitting diode and a second light-emitting diode

A method of manufacturing a semiconductor die, comprising:

• forming a first diode in a first die area and forming a second diode in a second die area such that the first diode and the second diode are connected in parallel with their polarities reversed;
• depositing a first phosphor layer over the first die area to complete a first light-emitting diode such that the first light-emitting diode is configured to emit electromagnetic radiation in a first wavelength range;
• and depositing a second phosphor layer over the second die area to complete a second light-emitting diode such that the second light-emitting diode is configured to emit electromagnetic radiation in a second wavelength range different from the first wavelength range by at least 200 nm, and the second phosphor layer and the first phosphor layer having different compositions.

An electronic device comprising:

• an imaging module that comprises a semiconductor die, the semiconductor die including at least a first light-emitting diode and a second light emitting diode, the first light-emitting diode including a first diode in a first die area and a first phosphor layer over the first die area, and the second light-emitting diode including a second diode in a second die area and a second phosphor layer over the second die area, the first light-emitting diode and the second light-emitting diode configured to emit electromagnetic radiation in wavelength ranges that differ from each other by at least 200 nm, the first diode and the second diode being electrically connected in parallel with their polarities reversed, and the second phosphor layer and the first phosphor layer having different compositions.