US 10,873,001 B2 · Methods of manufacturing optoelectronic devices using different growth substrates

Abstract

A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.

Claims25

Dependent claims

A method of manufacturing an optoelectronic device, the method comprising:

providing a growth structure having a substrate with a lattice transition from a first lattice constant to a second lattice constant having a relaxed lattice constant or an engineered growth structure with lattice constant different than typical conventional single or binary element substrates;
depositing an epitaxial layer over the growth structure or on the engineered growth structure, the epitaxial layer including one or more subcells that form the optoelectronic device, each subcell including at least one pn junction, and the subcells being lattice matched to the second lattice constant of the growth structure;
and
separating the epitaxial layer with the optoelectronic device from the growth structure or the engineered growth structure,
wherein the conventional single or binary element substrates include Ge, Si, InP, and GaAs substrates.

2 more elements

A method of manufacturing an optoelectronic device, the method comprising:

providing an engineered growth structure having a substrate and a relaxed lattice constant, the engineered growth structure being made from a layer transfer process between two wafers of disparate materials or from a ternary material and/or a quaternary material that produces the relaxed lattice constant;
depositing a release layer or an etch stop layer on the engineered growth structure;
depositing an epitaxial layer on the release layer or the etch stop layer, the epitaxial layer including one or more subcells that form the optoelectronic device, each subcell including at least one pn junction, and the subcells being lattice matched to the relaxed lattice constant of the engineered growth structure;
and
if the release layer is deposited, removing the release layer to separate the epitaxial layer with the optoelectronic device from the engineered growth structure, or
if the etch stop is deposited, grinding or etching away the engineered growth structure to separate the epitaxial layer with the optoelectronic device from the engineered growth structure.

3 more elements

Dependencies are inferred from the claim text.

Methods of manufacturing optoelectronic devices using different growth substrates

Life of this patent

Methods of manufacturing optoelectronic devices using different growth substrates

Life of this patent

Abstract

Claims25