Solar cell and method for manufacturing solar cell

A method for manufacturing a solar cell, comprising:

• a first step of forming a texture on a principal surface of an n-type crystalline silicon substrate;
• a second step of diffusing an n-type dopant on the principal surface of the silicon substrate having the texture formed thereon so that the principal surface has a n-type dopant concentration region higher than an n-type dopant concentration in a central part in the thickness direction of the silicon substrate;
• and
• a third step of forming an i-type amorphous silicon layer and a p-type amorphous silicon layer in this order so as to directly overlap the higher n-type dopant concentration region of the principal surface of the silicon substrate having the texture formed thereon,
• wherein, in the first step, the texture is formed so that a root part of the texture has a larger radius of curvature than a radius of curvature of a peak part thereof,
• in the second step, the n-type dopant on the principal surface of the silicon substrate is diffusing so that the n-type dopant on the principal surface of the silicon substrate has a larger thickness of the root part of the texture than a thickness of the peak part thereof,
• in the third step, the i-type amorphous silicon layer and p-type amorphous silicon layer are formed at the center of the principal surface of the n-type crystalline silicon substrate,
• wherein the higher n-type dopant concentration region is provided on an entirety of the principal surface of the crystalline silicon substrate, and
• the root part and the peak part of the texture in the higher n-type dopant concentration region are covered with the i-type amorphous silicon layer, the p-type amorphous silicon layer, and a transparent conductive layer.

A solar cell, comprising:

• an n-type crystalline silicon substrate having a texture provided on a principal surface thereof;
• an i-type amorphous silicon layer located on the principal surface of the crystalline silicon substrate;
• a p-type amorphous silicon layer located on the i-type amorphous silicon layer;
• a transparent conductive layer located on the p-type amorphous silicon layer;
• and
• a collector electrode located on the transparent conductive layer,
• wherein
• the crystalline silicon substrate has an n-type highly-doped region having n-type dopant, the n-type highly-doped region is located between the i-type amorphous silicon layer and the crystalline silicon substrate,
• the n-type highly-doped region has a higher dopant concentration than a dopant concentration in a central part in the thickness direction of the crystalline silicon substrate,
• the n-type highly doped region has a larger thickness of a root part of the texture than a thickness of a peak part thereof,
• the n-type silicon substrate, the i-type amorphous silicon layer, the p-type amorphous silicon layer and the transparent conductive layer are located in this order in the thickness direction of the crystalline silicon substrate at the center of the principal surface of the n-type crystalline silicon substrate,
• wherein the n-type highly-doped region is provided on an entirety of the principal surface of the crystalline silicon substrate, and
• the root part and the peak part of the texture in the n-type highly-doped region are covered with the i-type amorphous silicon layer, the p-type amorphous silicon layer, and the transparent conductive layer.