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US 10,872,983 B2Granted
Semiconductor devices and manufacturing methods thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJung Gil Yang, Woo Seok Park, Dong Chan Suh, Seung Min Song, Geum Jong Bae, Dong Il Bae
Life of this patent
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Abstract
A semiconductor device includes a substrate, a plurality of channel layers stacked on the substrate, a gate electrode surrounding the plurality of channel layers, and embedded source/drain layers on opposing sides of the gate electrode. The embedded source/drain layers each have a first region and a second region on the first region. The second region has a plurality of layers having different compositions.
Claims16
A semiconductor device, comprising:
- a substrate;
- a plurality of channel layers stacked on the substrate, the plurality of channel layers comprising a first channel layer and a second channel layer;
- a gate electrode surrounding the plurality of channel layers;
- and
- embedded source/drain layers on opposing sides of the gate electrode, the embedded source/drain layers each having a first region and a second region that is on the first region, the second region comprising a plurality of layers having different compositions,
- wherein lateral surfaces of the second channel layer adjacent to the embedded source/drain layers are inclined with respect to an upper surface of the substrate.
3 more elements
A semiconductor device, comprising:
- a substrate;
- a plurality of channel layers stacked on the substrate, the plurality of channel layers extending in a first direction;
- a gate electrode surrounding the plurality of channel layers, the gate electrode extending in a second direction, intersecting the first direction;
- and
- embedded source/drain layers on opposing sides of the gate electrode,
- wherein at least one first channel layer of the plurality of channel layers has a region having a first length extending farther in the first direction than a second length of a second channel layer of the plurality of channel layers that is adjacent to the first channel layer,
- wherein the embedded source/drain layers each have a first region and a second region that is on the first region, and
- wherein the second region comprises a plurality of layers having different compositions.
5 more elements
Dependencies are inferred from the claim text.