Semiconductor device with combined fin-edge-cut and fin-major-cut and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a pad oxide layer on a semiconductor substrate;
• forming a hard mask layer over the pad oxide layer;
• forming an anti-reflective layer over the hard mask layer;
• forming a first photoresist layer over the anti-reflective layer;
• patterning a portion of the first photoresist layer and removing portions of the hard mask layer and the anti-reflective layer exposed by the first photoresist layer;
• removing remaining portions of the first photoresist layer and the anti-reflective layer, thereby forming a patterned hard mask layer;
• performing a first etching operation to remove portions of the pad oxide layer exposed by the patterned hard mask layer and a portion of the semiconductor substrate exposed by the patterned hard mask layer, thereby obtaining a plurality of fins;
• forming a bottom layer over and between the fins;
• forming a middle layer over the bottom layer;
• forming a second photoresist layer on the middle layer;
• patterning a portion of the second photoresist layer to form an opening in the second photoresist layer;
• forming a spacer along a periphery of the opening, the spacer contacting sidewalls of the opening;
• removing portions of the bottom layer, the middle layer, and the fins below portions of the opening not occupied by the spacer, thereby forming a trench;
• forming a plug in the trench;
• removing the spacer;
• removing portions of the bottom layer, the middle layer, and the fins below portions of the opening exposed by removal of the spacer;
• and
• removing the plug, and remaining portions of the second photoresist layer, the bottom layer, and the middle layer.

A method of manufacturing a semiconductor device, comprising:

• forming a pad oxide layer on a semiconductor substrate;
• forming a hard mask layer over the pad oxide layer;
• forming an organic film over the hard mask layer;
• forming an etch barrier layer over the organic film;
• forming a bottom anti-reflective coating over the etch barrier layer;
• forming a first photoresist layer over the bottom anti-reflective coating;
• patterning a portion of the first photoresist layer and removing portions of the bottom anti-reflective coating, the etch barrier layer, the organic film, and the hard mask layer exposed by the patterned first photoresist layer;
• removing remaining portions of the first photoresist layer and the bottom anti-reflective coating, the etch barrier layer, and the organic film, thereby forming a patterned hard mask layer;
• performing a first etching operation to remove the pad oxide layer exposed by the patterned hard mask layer and a portion of the semiconductor substrate exposed by the patterned hard mask layer, thereby obtaining a plurality of fins;
• forming a trilayer resist over the fins, wherein an uppermost layer of the trilayer resist is a photosensitive layer;
• patterning a portion of the photosensitive layer to form an opening in the photosensitive layer;
• and
• forming a spacer along a periphery of the opening, the spacer contacting sidewalls of the opening.