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US 10,872,963 B2Granted
Substrate resistor and method of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHua Feng Chen, Shu-Hui Wang, Mu-Chi Chiang
Life of this patent
Estimating the term…
Abstract
A semiconductor structure can include a resistor on a substrate formed simultaneously with other devices, such as transistors. A diffusion barrier layer formed on a substrate is patterned to form a resistor and barrier layers under a transistor gate. A filler material, a first connector, and a second connector are formed on the resistor at the same manner and time as the gate of the transistor. The filler material is removed to form a resistor on a substrate.
Claims20
A semiconductor structure comprising:
- an isolation region in a substrate;
- a resistor over the isolation region;
- a first connector in contact with the resistor;
- a second connector in contact with the resistor, the second connector being laterally spaced apart from the first connector;
- and
- a semiconductor material layer in direct contact with the resistor, wherein the semiconductor material layer is interposed between the first connector and the second connector, and wherein a topmost surface of the semiconductor material layer is below a topmost surface of the first connector and a topmost surface of the second connector.
3 more elements
A semiconductor structure comprising:
- an isolation region embedded in a substrate;
- a resistor over the isolation region;
- a first connector contacting the resistor;
- a second connector contacting the resistor;
- an etch stop layer lining a first sidewall of the first connector and a first sidewall of the second connector, the first sidewall of the first connector facing the first sidewall of the second connector;
- and
- a semiconductor material layer over and in physical contact with the resistor, wherein a first portion of the etch stop layer is interposed between the first sidewall of the first connector and the semiconductor material layer, and wherein a second portion of the etch stop layer is interposed between the first sidewall of the second connector and the semiconductor material layer.
4 more elements
A semiconductor structure comprising:
- an isolation region extending into a substrate;
- a gate dielectric layer over the substrate and the isolation region;
- a diffusion barrier layer over the gate dielectric layer, wherein a portion of the diffusion barrier layer forms a resistor;
- a semiconductor material layer over the resistor;
- a first spacer on a first sidewall of the resistor;
- a second spacer on a second sidewall of the resistor, the second sidewall of the resistor being opposite to the first sidewall of the resistor;
- and
- a first connector and a second connector in physical contact with the resistor, the first connector being interposed between the first spacer and the semiconductor material layer, the second connector being interposed between the second spacer and the semiconductor material layer.
5 more elements
Dependencies are inferred from the claim text.