Semiconductor device

A semiconductor device, comprising:

• a semiconductor body including a first semiconductor layer of a first conductivity type;
• a first electrode provided on a back surface of the semiconductor body;
• a second electrode provided on a front surface of the semiconductor body;
• a third electrode provided on the front surface of the semiconductor body at a position spaced from the second electrode;
• a first film linking the second electrode and the third electrode, the first film including a material having a higher resistivity than a material of the first semiconductor layer;
• and
• a second film provided between the semiconductor body and the first film, the second film being insulative,
• the semiconductor body further including a second semiconductor layer of a second conductivity type and a third semiconductor layer of the first conductivity type, the second semiconductor layer being selectively provided between the second electrode and the first semiconductor layer, the third semiconductor layer being selectively provided between the third electrode and the first semiconductor layer, the third semiconductor layer including first-conductivity-type impurities having a higher concentration than a concentration of first-conductivity-type impurities in the first semiconductor layer,
• the second film including a first-film-thickness portion and a second-film-thickness portion, the first-film-thickness portion having a first film thickness along a first direction directed from the first electrode toward the second electrode, the second-film-thickness portion having a second film thickness along the first direction thicker than the first film thickness, the first-film-thickness portion and the second-film-thickness portion surrounding the second electrode,
• the first film extending along surfaces of the first-film-thickness portion and the second-film-thickness portion, the first film having a film thickness thinner than a thickness obtained by subtracting the first film thickness from the second film thickness.