Semiconductor device and fabricating method thereof

A semiconductor device comprising:

• a fin structure;
• a 2D-material passivation layer wrapping around three sides of the fin structure;
• a 2D-material channel layer wrapping around three sides of the 2D-material passivation layer;
• and
• a gate stack wrapping around three sides of the 2D-material channel layer, wherein the gate stack includes a ferroelectric layer.

A semiconductor device comprising:

• a fin structure extending along a first direction;
• a gate stack extending across the fin structure along a second direction different from the first direction;
• and
• a 2D-material channel layer wrapping around three sides of the fin structure and being wrapped around by a ferroelectric layer of the gate stack when viewed in a cross section taken along the second direction.