Image sensor having phase difference detection pixel

An image sensor, comprising:

• a substrate including a plurality of pixels including a first pixel and a second pixel that are located adjacent to each other in a first direction, the first pixel including a first photoelectric conversion element and an open part which is eccentrically located in the first pixel in the first direction and the second pixel including a second photoelectric conversion element;
• a light-shield pattern that is formed over a part of the first photoelectric conversion element of the first pixel;
• and
• a light blocking layer formed between the first photoelectric conversion element and the second photoelectric conversion element, and
• the image sensor further comprises:
• a grid pattern formed over the substrate along boundaries of the plurality of pixels,
• wherein the light-shield pattern is formed in a same level as the grid pattern and abuts on the grid pattern.