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US 10,872,906 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Yu Hung, Pei-Wei Lee, Pang-Yen Tsai
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Abstract
A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first semiconductor fin over the substrate and comprising a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer, wherein the first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer, and the first germanium-containing layer is asymmetric with respect to an axis of the first semiconductor fin;
- and
- a gate stack across the first semiconductor fin.
1 more element
A semiconductor device, comprising:
- a substrate;
- a first semiconductor fin protruding above the substrate, the first semiconductor fin comprising a first germanium-containing layer and a second germanium-containing layer having a germanium atomic percentage lower than a germanium atomic percentage of the first germanium-containing layer;
- and
- a p-type epitaxy region wrapping around three sides of the first semiconductor fin, the second germanium-containing layer being between the p-type epitaxy region and the first germanium-containing layer.
1 more element
A method, comprising:
- etching a hybrid substrate to form a recess extending into the hybrid substrate, wherein the hybrid substrate comprises a first semiconductor layer having a first surface orientation, a dielectric layer over the first semiconductor layer, and a second semiconductor layer having a second surface orientation different from the first surface orientation, wherein after the etching, a top surface of the first semiconductor layer is exposed to the recess;
- forming a spacer on a sidewall of the recess;
- performing a first epitaxy process to grow a first germanium-containing layer from the exposed top surface of the first semiconductor layer;
- performing a second epitaxy process to grow a second germanium-containing layer from the first germanium-containing layer, wherein a flow rate of a germanium-containing gas used in the second epitaxy process is less than a flow rate of a germanium-containing gas used in the first epitaxy process;
- and
- patterning the first and second germanium-containing layers to form a fin.
3 more elements
Dependencies are inferred from the claim text.