Semiconductor memory device

A semiconductor memory device, comprising:

• first conductive layers stacked in a first direction;
• second conductive layers stacked in the first direction and spaced from the first conductive layers in a second direction crossing the first direction;
• a first insulation region provided between the first conductive layers and the second conductive layers, the first insulation region extending in the first direction;
• a second insulation region provided between the first conductive layers and the second conductive layers, the second insulation region extending in the first direction, the second insulation region being spaced from the first insulation region in a third direction crossing the first and second directions;
• and
• a pillar arranged between the first conductive layers and the second conductive layers, the pillar being arranged between the first insulation region and the second insulation region, and extending in the first direction, wherein
• the pillar includes a charge storage film, a first insulation film, and a semiconductor layer, which are provided sequentially from the first conductive layers,
• a second insulation film is provided between the charge storage film and the first conductive layers, and
• in a cross section of the charge storage film taken along the second and third directions, a portion of the charge storage film is provided between the first insulation region and the first conductive layers at an end of a portion where the first conductive layers and the charge storage film face each other.