Three-dimensional memory device including signal and power connection lines extending through dielectric regions and methods of making the same

A three-dimensional memory device, comprising:

• a peripheral circuitry comprising field effect transistors located over a substrate;
• lower-level metal interconnect structures embedded in lower-level dielectric material layers overlying the field effect transistors and connected to nodes of the field effect transistors;
• groups of alternating stacks of insulating layers and electrically conductive layers comprising word lines located over the lower-level dielectric material layers, each alternating stack laterally extending along a first horizontal direction, wherein:
• the groups of alternating stacks comprise odd-numbered groups that alternate with even-numbered groups along a second horizontal direction that is perpendicular to the first horizontal direction;
• the odd-numbered groups of alternating stacks each comprise a first laterally-protruding staircase segment on a first end, and a first indented region on a second end opposite to the first end along the first horizontal direction;
• the even-numbered groups of alternating stacks each comprise a second laterally-protruding staircase segment on a second end located between two of the first indented regions and a second indented region located between two of the first laterally-protruding staircase segments on a first end opposite to the second end along the first horizontal direction;
• dielectric material portions located in the first and second indented regions;
• clusters of memory stack structures vertically extending through the groups of alternating stacks;
• word line contact via structures contacting the electrically conductive layers;
• word-line-interconnect metal lines electrically connected to a respective one of the word line contact via structures and extending from above the respective one of the word lines over a respective one of the dielectric material portions along the second horizontal direction;
• and
• through-memory-level word-line-connection via structures electrically connected to a respective one of the word-line-interconnect metal lines and extending through a respective one of the dielectric material portions and electrically connected to a respective one of the lower-level metal interconnect structures.