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US 10,872,893 B2Granted
Dual nitride stressor for semiconductor device and method of manufacturing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lin Yang, Chia-Cheng Ho, Chih Chieh Yeh, Cheng-Yi Peng, Tsung-Lin Lee
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Abstract
A method for manufacturing a semiconductor device includes forming a fin structure over a substrate and forming a first gate structure over a first portion of the fin structure. A first nitride layer is formed over a second portion of the fin structure. The first nitride layer is exposed to ultraviolet radiation. Source/drain regions are formed at the second portion of the fin structure.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a first fin structure and a second fin structure over a substrate;
- forming a first gate structure over a first portion of the first fin structure and forming a second gate structure over a first portion of the second fin structure;
- forming a compressive film over a second portion of the first fin structure;
- exposing the compressive film to ultraviolet radiation;
- forming first source/drain regions at the second portion of the first fin structure;
- forming a tensile film over a second portion of the second fin structure;
- and
- forming second source/drain regions at the second portion of the second fin structure,
- wherein the first source/drain regions extend along and in contact with a side surface of the compressive film and extend vertically over a top of the compressive film.
6 more elements
A semiconductor device comprising:
- a first fin structure and a second fin structure;
- a first gate structure disposed over a first portion of the fin structure and a second gate structure disposed over a first portion of the second fin structure;
- a compressive film disposed over a second portion of the first fin structure and a tensile film disposed over a second portion of the second fin structure;
- and
- source/drain regions formed at the second portion of the first fin structure and second portion of the second fin structure,
- wherein the source/drain regions extend along and in contact with a side surface of the compressive film and extend vertically over a top of the compressive film.
3 more elements
A semiconductor device comprising:
- a first fin structure and a second fin structure;
- a shallow trench isolation region disposed between the first fin structure and the second fin structure;
- a first gate structure disposed over a first portion of the fin structure and a second gate structure disposed over a first portion of the second fin structure;
- a compressive nitride film residue disposed over a second portion of the first fin structure and a tensile nitride film residue disposed over a second portion of the second fin structure;
- and
- source/drain regions formed at the second portion of the first fin structure and second portion of the second fin structure,
- wherein the source/drain regions extend laterally and vertically over the compressive film residue and the tensile nitride film residue, and
- the compressive nitride film residue and the tensile nitride film residue are disposed over the shallow trench isolation region.
5 more elements
Dependencies are inferred from the claim text.