Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin, Horng-Huei Tseng
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Abstract
A semiconductor device includes a substrate, a core device disposed above the substrate, and an input/output (I/O) device disposed above the substrate. The core device includes a first gate electrode having a bottom surface and a sidewall that define a first interior angle therebetween. The first interior angle is an obtuse angle. The I/O device includes a second gate electrode having a bottom surface and a sidewall that define a second interior angle therebetween. The second interior angle is greater than the first interior angle.
Claims20
A semiconductor device comprising:
- a substrate;
- a core device over the substrate and comprising a first gate electrode having a bottom surface and a sidewall, wherein the bottom surface of the first gate electrode and the sidewall of the first gate electrode define inside the first gate electrode a first interior angle, and the first interior angle is an obtuse angle;
- and
- an input/output (I/O) device over the substrate and comprising a second gate electrode having a bottom surface and a sidewall, wherein the bottom surface of the second gate electrode and the sidewall of the second gate electrode define inside the second gate electrode a second interior angle, and the second interior angle is greater than the first interior angle.
A semiconductor device comprising:
- a substrate;
- a core device over the substrate and comprising a first gate electrode having a bottom surface and a sidewall, wherein the bottom surface of the first gate electrode and the sidewall of the first gate electrode define inside the first gate electrode a first interior angle;
- and
- an input/output (I/O) device over the substrate and comprising a second gate electrode having a bottom surface and a sidewall, wherein the bottom surface of the second gate electrode and the sidewall of the second gate electrode define inside the second gate electrode a second interior angle, and the second interior angle and the first interior angle both are obtuse angles but have different values.
A semiconductor device comprising:
- a substrate;
- a core device over the substrate and comprising a first gate electrode having a top surface and a bottom surface;
- and
- an input/output (I/O) device over the substrate and comprising a second gate electrode having a top surface and a bottom surface, wherein a width of the top surface of the first gate electrode is less than a width of the top surface of the second gate electrode, and a width of the bottom surface of the second gate electrode is less than the width of the top surface of the second gate electrode.
Dependencies are inferred from the claim text.