Back to results
US 10,872,889 B2Granted
Semiconductor component and fabricating method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTing-Yeh Chen, Wei-Yang Lee, Han-Wei Wu, Feng-Cheng Yang
Life of this patent
Estimating the term…
Abstract
A semiconductor component includes a substrate having a dense zone and a less-dense zone, at least one first FinFET device disposed on the dense zone, and at least one second FinFET device disposed on the less-dense zone, in which a width of a first source/drain region of the first FinFET device is smaller than a width of a second source/drain region of the second FinFET device.
Claims20
A semiconductor component, comprising:
- a substrate having a first zone and a second zone;
- at least one first FinFET device disposed on the first zone and including a fin and an epitaxy source/drain region on the fin;
- at least one second FinFET device disposed on the second zone and including a first fin and an epitaxy source/drain region on the first fin;
- an isolation structure at least partially between the fin of the first FinFET device and the first fin of the second FinFET device;
- and
- an insulating layer conformably on a sidewall of the epitaxy source/drain region of the first FinFET device, wherein a sidewall of the epitaxy source/drain region of the second FinFET device is free from coverage by the insulating layer, a top surface of the insulating layer is lower than a top surface of the epitaxy source/drain region, and a bottom of the insulating layer is higher than a top of the isolation structure.
3 more elements
A semiconductor component, comprising:
- a substrate having a first zone and a second zone;
- a plurality of fins disposed on the substrate;
- at least two first epitaxy structures disposed on adjacent two of the fins, wherein the first epitaxy structures are in the first zone and are isolated from each other;
- an insulating layer having a first portion conformally extending along a sidewall of one of the first epitaxy structures, a second portion conformally extending along a sidewall of another of the first epitaxy structures, and a third portion interconnecting the first portion and the second portion, wherein a bottommost portion of the third portion of the insulating layer is higher than a bottommost portion of the first epitaxy structures;
- and
- at least two second epitaxy structures disposed on other adjacent two of the fins, wherein the second epitaxy structures are in the second zone and are merged.
3 more elements
A semiconductor component, comprising:
- a substrate;
- a plurality of fins disposed on the substrate;
- an isolation structure surrounding the fins;
- first and second epitaxy structures disposed on the fins, wherein the first and second epitaxy structures are isolated from each other;
- an insulating layer having a first portion conformally extending along a first portion of a top surface of the isolation structure and a second portion conformally extending along a sidewall of the first epitaxy structure, wherein the first portion of the insulating layer terminates prior to reaching a second portion of the top surface of the isolation structure, such that the second portion of the top surface of the isolation structure and a sidewall of the second epitaxy structure are free from coverage by the insulating layer;
- and
- a contact disposed on the first epitaxy structure, wherein the first epitaxy structure is partially embedded in the contact.
4 more elements
Dependencies are inferred from the claim text.