Integrated circuit packages and methods of forming same

A method comprising:

• attaching a first side of an integrated circuit die to an insulating layer on a carrier, a second side of the integrated circuit die having a contact pad, the first side of the integrated circuit die being opposite the second side of the integrated circuit die;
• forming an encapsulant over and around the integrated circuit die;
• and
• simultaneously forming a conductive via and a first redistribution layer (RDL) in the encapsulant, the conductive via being laterally spaced apart from a sidewall of the integrated circuit die, a top surface of the conductive via being below a topmost surface of the encapsulant, a bottommost point of the conductive via being level with a bottommost point of the encapsulant, the first RDL being over the second side of the integrated circuit die, the first RDL being in electrical contact with the contact pad, wherein simultaneously forming the conductive via and the first RDL in the encapsulant comprises:
• patterning the encapsulant to form a first opening and a second opening in the encapsulant, the first opening extending through the encapsulant and exposing a topmost surface of the insulating layer, the second opening exposing the second side of the integrated circuit die;
• forming a patterned mask over the encapsulant, the patterned mask exposing the first opening and the second opening;
• and
• simultaneously non-conformally depositing a conductive material in the first opening and the second opening through the patterned mask, wherein a bottommost point of the conductive material is above the bottommost point of the encapsulant.

A method comprising:

• depositing a first insulating layer over a carrier;
• attaching a first side of an integrated circuit die to the first insulating layer, a second side of the integrated circuit die having a contact pad, the first side of the integrated circuit die being opposite the second side of the integrated circuit die;
• depositing a second insulating layer over the first insulating layer, the second insulating layer extending along a sidewall of the integrated circuit die and covering the contact pad of the integrated circuit die;
• and
• simultaneously forming a conductive column in the second insulating layer and a first redistribution layer (RDL) over the contact pad of the integrated circuit die, the conductive column extending through the second insulating layer and physically contacting the first insulating layer, a portion of the first RDL extending into the second insulating layer and physically contacting the contact pad of the integrated circuit die, wherein simultaneously forming the conductive column in the second insulating layer and the first RDL over the contact pad of the integrated circuit die comprises:
• patterning the second insulating layer to form a first opening and a second opening in the second insulating layer, the first opening exposing a topmost surface of the first insulating layer, the second opening exposing the contact pad of the integrated circuit die;
• and
• simultaneously non-conformally depositing a conductive material in the first opening and the second opening, wherein a bottommost point of the conductive material is above a topmost point of the first insulating layer.