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US 10,872,877 B2Granted
Method of manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorErubi Suzuki
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes: forming a first electrode and a second electrode on an insulating layer so as to be apart from each other; forming a barrier made of same material as a metal terminal on a peripheral portion of an ultrasonic bonding portion of the metal terminal; and applying pressing force and ultrasonic vibration to the ultrasonic bonding portion of the metal terminal by using an ultrasonic tool to ultrasonically bond the metal terminal to the first electrode.
Claims19
A method of manufacturing a semiconductor device comprising:
- forming a first electrode and a second electrode on an insulating layer so as to be apart from each other;
- forming a barrier made of same material as a metal terminal on a peripheral portion of an ultrasonic bonding portion of the metal terminal;
- and
- after forming the barrier, applying pressing force and ultrasonic vibration to the ultrasonic bonding portion of the metal terminal by using an ultrasonic tool to ultrasonically bond the metal terminal to the first electrode.
1 more element
Dependencies are inferred from the claim text.