Fabrication method of semiconductor structure
AssigneeSiliconware Precision Industries Co., Ltd.
InventorsYi-Cheih Chen, Sung-Huan Sun, Cheng-An Chang, Chien-Hung Wu, Fu-Tang Huang
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Abstract
The present invention provides a semiconductor structure and a method of fabricating the same. The method includes: providing a chip having conductive pads, forming a metal layer on the conductive pads, forming a passivation layer on a portion of the metal layer, and forming conductive pillars on the metal layer. Since the metal layer is protected by the passivation layer, the undercut problem is solved, the supporting strength of the conductive pillars is increased, and the product reliability is improved.
Claims11
A method of fabricating a semiconductor structure, comprising:
- providing a chip having a plurality of conductive pads and at least one insulating layer formed on the plurality of conductive pads, wherein the insulating layer has a plurality of insulating layer openings exposing the plurality of conductive pads;
- forming a metal layer on the insulating layer, and electrically connecting the metal layer to the conductive pads, with a portion of the insulating layer exposed from the metal layer;
- forming directly on a portion of the metal layer and on the insulating layer a passivation layer that covers a lateral side of the metal layer, and forming a plurality of first openings in the passivation layer, with a portion of the metal layer exposed from the first openings, wherein the passivation layer between two neighboring ones of the conductive pads is either continuous or discontinuous, wherein each of the first openings has a width greater than a width of each of the insulating layer openings;
- and
- after forming the passivation layer on the portion of the metal layer and on the insulating layer, forming a plurality of conductive pillars on the exposed portion of the metal layer in the first openings.
Dependencies are inferred from the claim text.