Semiconductor devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJeonggi Jin, Ju-Il Choi, Teahwa Jeong, Atsushi Fujisaki
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AssigneeSamsung Electronics Co., Ltd.
InventorsJeonggi Jin, Ju-Il Choi, Teahwa Jeong, Atsushi Fujisaki
Estimating the term…
Disclosed are semiconductor devices and methods of manufacturing the same. The method includes providing a semiconductor substrate, forming a redistribution line on a top surface of the semiconductor substrate, and forming a passivation layer to cover the redistribution line on the top surface of the semiconductor substrate. The forming a redistribution line includes a first stage of forming a first segment of the redistribution line on the top surface of the semiconductor substrate, and a second stage of forming a second segment of the redistribution line on the first segment of the redistribution line. An average grain size of the second segment of the redistribution line is less than an average grain size of the first segment of the redistribution line.
A method of manufacturing a semiconductor device, the method comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.