Semiconductor packages
AssigneeAdvanced Semiconductor Engineering, Inc. Kaohsiung, Taiwan
InventorsYong-Da Chiu, Shiu-Chih Wang, Shang-Kun Huang, Ying-Ta Chiu, Shin-Luh Tarng, Chih-Pin Hung
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Abstract
A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.
Claims16
An electrical connection structure, comprising:
- a first conductive layer;
- a second conductive layer;
- and
- a conductive cup between the first conductive layer and the second conductive layer, the conductive cup having a hardness about one and a half times greater than a hardness of the first conductive layer, and the hardness of the conductive cup ranges from about 1.2 GPa to about 3.1 GPa and is about one and a half times greater than a hardness of the second conductive layer,
- wherein the first conductive layer and the conductive cup both include copper.
A semiconductor package, comprising:
- a substrate;
- a first conductive layer on the substrate, the first conductive layer including a first plurality of grains;
- a second conductive layer on the first conductive layer, the second conductive layer including a second plurality of grains;
- and
- a cup layer between the first conductive layer and the second conductive layer, the cup layer comprising a third plurality of grains,
- wherein a number of the third plurality of grains contacting the first conductive layer is greater than a number of the first plurality of grains contacting the cup layer,
- the cup layer has a hardness about one and a half times greater than a hardness of the first conductive layer,
- the hardness of the cup lay ranges from about 1.2 GPa to about 3.1 GPa and is about one and a half times greater than a hardness of the second conductive layer, and
- the first conductive layer and the cup layer both include copper.
A method of forming an electrical connection structure, comprising:
- providing a first conductive layer;
- forming a conductive cup on the first conductive layer, a hardness of the conductive cup being about one and a half times greater than a hardness of the first conductive layer, wherein the first conductive layer and the conductive cup both include copper;
- and
- bonding a second conductive layer to the conductive cup, wherein the hardness of the conductive cup ranges from about 1.2 GPa to about 3.1 GPa and is about one and a half times greater than a hardness of the second conductive layer.
Dependencies are inferred from the claim text.