Semiconductor device including through vias in molded columns
AssigneeWestern Digital Technologies, Inc.
InventorsYazhou Zhang, Chin-Tien Chiu, Cong Zhang
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Abstract
A semiconductor device is disclosed including a stack of semiconductor die. Openings are formed in the semiconductor die as they are added to the stack, which openings are aligned at different levels of the stack. The openings are filled with an electrically insulative compound to form a molded column through all semiconductor die in the stack. After all semiconductor die are added to the stack, a via may be drilled through the molded column to electrically interconnect each semiconductor die in the stack.
Claims19
A semiconductor device, comprising:
- a semiconductor die;
- conductive traces on the semiconductor die;
- an opening formed through the semiconductor die;
- a compound within the opening;
- and
- one or more vias, comprising an electrical conductor, formed within the compound and electrically coupled to one or more conductive trace of the conductive traces;
- wherein the conductive traces are formed on a layer attached to the semiconductor die, and wherein the one or more vias are formed through the layer.
A semiconductor device, comprising:
- a plurality of stacked semiconductor die;
- first means on surfaces of the plurality of stacked semiconductor die for conducting electrical signals;
- second means, formed through the plurality of semiconductor dies, for receiving a material;
- third means for filling the second means;
- and
- fourth means formed through the third means for conducting electrical signals from the first means;
- wherein the first means are formed on a layer attached to the semiconductor die, and wherein the fourth means are formed through the layer.
A semiconductor device, comprising:
- a plurality of stacked semiconductor die;
- conductive traces on surfaces of the plurality of stacked semiconductor die;
- a plurality of openings, an opening of the plurality of openings formed through each semiconductor die of the plurality of semiconductor dies, wherein the plurality of openings on the plurality of stacked semiconductor dies are aligned with each other;
- a compound within the plurality of openings;
- and
- one or more vias, comprising an electrical conductor, formed through the compound in the plurality of openings and electrically coupled to one or more conductive trace of the conductive traces;
- wherein the conductive traces extend into the plurality of openings formed through the plurality of semiconductor dies, the one or more vias formed within the compound lying in physical contact with the conductive traces.
Dependencies are inferred from the claim text.