Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a semiconductor chip;
• an encapsulation extending along sidewalls of the semiconductor chip;
• a first redistribution structure disposed on the encapsulation and a back surface of the semiconductor chip, the first redistribution structure electrically coupled to the semiconductor chip;
• a dielectric casing disposed on the first redistribution structure opposite to the encapsulation, the dielectric casing comprising a through hole corresponding to the semiconductor chip;
• a ceramic protrusion disposed within the through hole of the dielectric casing and being in thermal contact with the first redistribution structure;
• and
• an antenna pattern overlying the dielectric casing opposite to the first redistribution structure and electrically coupled to the semiconductor chip, wherein the ceramic protrusion is protruded higher than the antenna pattern relative to the first redistribution structure.

A semiconductor device, comprising:

• a redistribution structure comprising a first surface and a second surface opposite to each other;
• a semiconductor chip laterally encapsulated by an encapsulation and disposed on the second surface of the redistribution structure;
• a dielectric layer overlying the first surface of the redistribution structure;
• a thermal-dissipating protrusion disposed over the first surface of the redistribution structure, the thermal-dissipating protrusion located within a hollow region of the dielectric layer and extending higher than a top surface the dielectric layer;
• and
• an antenna pattern overlying the top surface of the dielectric layer, arranged aside the thermal-dissipating protrusion, and electrically coupled to the semiconductor chip.