Device integrated with junction field effect transistor and method for manufacturing the same

A device integrated with a junction field effect transistor (JFET), the device is divided into a JFET region and a power device region, and the device comprises:

• a drain with a first conduction type, while a part of the drain is located in the JFET region and the other part of the drain is located in the power device region;
• and
• a first conduction type region disposed on a front surface of the drain, while a part of the first conduction type region is located in the JFET region, and the other part of the first conduction type region is located in the power device region;
• the JFET region comprises:
• a first well with a second conduction type, which is formed in the first conduction type region;
• a second well with a second conduction type, which is formed in the first conduction type region, while an ion concentration of the second well is higher than an ion concentration of the first well and the first conduction type is opposite to the second conduction type;
• a JFET source with the first conduction type;
• a metal electrode formed on the JFET source, which is in contact with the JFET source;
• and
• a second conduction type buried layer formed under the JFET source and the second well;
• an isolation well located at a boundary between the JFET region and the power device region, the isolation well isolating the JFET region from the power device region.