Semiconductor structure and manufacturing method thereof

A method for manufacturing a semiconductor structure, comprising:

• forming a plurality of fin structures and a plurality of micro-fins between the plurality of fin structures on a substrate;
• forming a first dielectric layer around the plurality of fin structures and over the plurality of micro-fins;
• forming a second dielectric layer over the first dielectric layer and the plurality of micro-fins;
• forming an interlayer dielectric (ILD) layer over the first dielectric layer and the second dielectric layer;
• performing an etching operation over the ILD layer;
• and
• forming a contact surrounded by the ILD layer and disposed above the second dielectric layer.

A method for manufacturing a semiconductor structure, comprising:

• forming a plurality of fin structures protruded from a substrate, and a plurality of micro-fins between the plurality of fin structures and protruded from the substrate;
• forming an oxide layer surrounding the plurality of fin structures and covering the plurality of micro-fins;
• forming a nitride layer surrounded by the oxide layer and disposed above the plurality of micro-fins;
• forming an interlayer dielectric (ILD) layer over the oxide layer and the nitride layer and surrounding the plurality of fin structures;
• and
• forming a contact extending through the ILD and disposed above the plurality of micro-fins, the oxide layer and the nitride layer.