Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDaeho Yoon, Daeseon Jeon, Jaeyoung Choi
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Abstract
Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises providing a layout comprising a first group that includes first and second patterns and a second group that includes third and fourth patterns, examining a bridge risk region in the layout, biasing one end of at least one of the first and third patterns, and forming first to fourth conductive patterns by respectively using the first to fourth patterns of the layout. The one end of at least one of the first and third patterns are adjacent to the bridge risk region.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- providing a layout comprising a first group and a second group, the first group including a first pattern and a second pattern, the second group including a third pattern and a fourth pattern;
- examining a bridge risk region in the layout;
- biasing one end of at least one of the first and third patterns;
- and
- forming first to fourth conductive patterns by using the first to fourth patterns of the layout, respectively,
- wherein the one end of at least one of the first and third patterns is adjacent to the bridge risk region.
A method of manufacturing a semiconductor device, the method comprising:
- providing a layout;
- performing a line-end biasing on the layout;
- and
- using the layout to form conductive patterns on a substrate,
- wherein performing the line-end biasing comprises:
- examining a bridge risk region in the layout;
- biasing one end of at least one of patterns in the layout, the one end being adjacent to the bridge risk region;
- and
- performing a design rule check.
A method of manufacturing a semiconductor device, the method comprising:
- providing a layout including a first pattern, a second pattern, a third pattern and a fourth pattern that are sequentially arranged in a first direction, the first and third patterns constituting a first group, the second and fourth patterns constituting a second group, the first pattern having a first end, the fourth pattern having a second end;
- generating a first bulging region on one side of the third pattern aligned with the first end in the first direction;
- generating a second bulging region on one side of the second pattern aligned with the second end in the first direction;
- defining a bridge risk region on an area where the first bulging region and the second bulging region overlap;
- biasing at least one of the first and second ends of the first and fourth patterns, the at least one end of the first and second ends of the first and fourth patterns being adjacent to the bridge risk region;
- and
- forming first to fourth conductive patterns by using the first to fourth patterns of the layout, respectively.
Dependencies are inferred from the claim text.