Conductive interconnect structures in integrated circuits

A method of forming a semiconductor device, the method comprising:

• forming a conductive feature on a substrate;
• depositing a conductive seed layer over the conductive feature, wherein an oxide layer is formed over a surface of the conductive seed layer;
• performing a remote plasma surface treatment to expose the oxide layer to a reducing agent, the remote plasma surface treatment reducing a first amount of the oxide layer;
• after performing the remote plasma surface treatment, performing a soak in a chemical bath, the soak in the chemical bath reducing a second amount of the oxide layer;
• and
• electroplating a conductive layer over the conductive seed layer, wherein performing the remote plasma surface treatment, performing the soak, and electroplating are performed in a same cluster tool without exposing the substrate to an oxygen-containing environment.

A method of forming a semiconductor device, the method comprising:

• forming a first dielectric layer over a source/drain region;
• forming an opening through the first dielectric layer to the source/drain region;
• forming a silicide region in the source/drain region exposed in the opening;
• forming a first conductive layer in the opening;
• exposing the first conductive layer to an oxygen-containing environment, the exposing forming an oxide layer on the first conductive layer;
• reducing at least a first portion of the oxide layer using a plasma process;
• reducing at least a second portion of the oxide layer using a wet process;
• and
• electroplating a second conductive layer over the first conductive layer, wherein the exposing, the plasma process, the wet process, and the electroplating are performed in a single cluster tool.