Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• (a) patterning a wiring material by photolithography and etching, using a photoresist as an etching mask, thereby to form a wiring layer over a semiconductor substrate;
• (b) after the step (a), removing the photoresist as the etching mask by ashing treatment, whereby an oxide film is formed on the wiring layer;
• (c) after the step (b), forming a first passivation film of an inorganic material on the oxide film over the wiring layer, the first passivation film having an opening exposing a portion of the oxide film;
• (d) after the step (c), removing the portion of the oxide film exposed from the opening of the first passivation film by dry etching, to form a first opening exposing a portion of the wiring layer in the oxide film;
• (e) after the step (d), forming a second passivation film of an organic material on the first passivation film, the second passivation film having a second opening communicated with the first opening such that the first and second openings expose the portion of the wiring layer;
• and
• (f) after the step (e), growing a plating film on the portion of the wiring layer exposed from the first opening and the second opening.