Back to results
US 10,872,811 B2Granted
Memory device and manufacturing method thereof
AssigneeWinbond Electronics Corp.
InventorHuang-Nan Chen
Life of this patent
Estimating the term…
Abstract
Provided is a memory device including a substrate, a plurality of contacts, and a plurality of air gaps. The substrate has a plurality of active areas. The contacts are respectively disposed on ends of the active areas. The air gaps respectively surround the sidewalls of the contacts.
Claims8
A manufacturing method of a memory device, comprising:
- providing a substrate, wherein the substrate has a plurality of first regions and a plurality of second regions;
- forming a plurality of word line sets in the first regions;
- forming a first dielectric layer on the substrate of the first regions;
- forming a conductive layer on the substrate of the second regions, wherein a top surface of the conductive layer is lower than a top surface of the first dielectric layer;
- forming a sacrificial layer to surround the conductive layer;
- conformally forming a second dielectric layer on the substrate;
- performing an etching process to form openings in the conductive layer and the second dielectric layer of the second regions, wherein the openings expose a first isolation structure in the substrate of the second regions;
- forming a second isolation structure in the openings;
- performing a planarization process to expose the sacrificial layer;
- recessing a portion of the conductive layer to form a first conductive structure and expose the sacrificial layer;
- removing the sacrificial layer to form an air gap surrounding an upper portion of the first conductive structure;
- and
- forming a second conductive structure on the first conductive structure to encapsulate the air gap.
10 more elements
A manufacturing method of a memory device, comprising:
- providing a substrate, wherein the substrate has a plurality of active areas;
- forming a first dielectric layer on the substrate;
- forming a plurality of contact openings in the first dielectric layer, wherein the contact openings are respectively disposed on ends of the active areas;
- respectively forming a plurality of conductive layers in the contact openings;
- forming a sacrificial layer to surround the conductive layers;
- recessing a portion of the conductive layers to form first conductive structures, wherein the first conductive structures include lower portions and upper portions on the lower portions, and a bottom width of the lower portions is greater than a bottom width of the upper portions;
- removing the sacrificial layer to form air gaps surrounding the upper portions of the first conductive structures;
- and
- forming second conductive structures on the first conductive structures to encapsulate the air gaps,
- wherein the air gaps are in direct contact with the upper portions of the first conductive structures after the forming the second conductive structures on the first conductive structures.
7 more elements
Dependencies are inferred from the claim text.