Contact structures for integrated circuit products

A transistor device, comprising:

• a gate structure positioned above at least an active region, the gate structure having an axial length in a direction corresponding to a gate width direction of the transistor device, a first portion of the axial length of the gate structure having a first upper surface and a second portion of the axial length of the gate structure having a second upper surface, wherein the first upper surface is positioned at a level that is above a level of the second upper surface;
• a gate contact structure positioned entirely above the active region, the gate contact structure contacting the first upper surface of the gate structure;
• a source/drain contact structure positioned adjacent the gate structure and conductively coupled to a source/drain region of the transistor device, the source/drain contact structure having an axial length in a direction corresponding to the gate width direction of the transistor device, a first portion of the axial length of the source/drain contact structure having a third upper surface and a second portion of the axial length of the source/drain contact structure having a fourth upper surface, wherein the third upper surface is positioned at a level that is above a level of the fourth upper surface;
• and
• a contact structure that contacts the third upper surface of the source/drain contact structure.

A device, comprising:

• a gate structure for a transistor device;
• at least one layer of insulating material positioned above the gate structure, the at least one layer of insulating material having an opening formed therein and an upper surface that is positioned at a first level;
• an internal sidewall spacer positioned within the opening;
• a conductive member positioned within the internal sidewall spacer, the conductive member having an axial length and a recessed upper surface that is positioned at a second level that is below the first level;
• an insulating contact cap positioned above the recessed upper surface of the conductive member, the insulating contact cap being positioned above a first portion of the axial length of the conductive member while a second portion of the axial length of the conductive member is not covered by the insulating contact cap;
• and
• a gate contact structure that conductively contacts the gate structure, wherein at least a portion of the gate contact structure is positioned vertically above at least one of the internal sidewall spacer or the insulating contact cap.