Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a pair of spaced-apart metal wirings disposed in a first dielectric layer;
• a second dielectric layer disposed over a portion of the first dielectric layer;
• a third dielectric layer disposed over the plurality of metal wirings and between each of the pair of metal wirings;
• and
• a barrier layer in contact with and surrounding each of the pair of metal wirings;
• wherein the second dielectric layer is disposed between the barrier layer and the third dielectric layer, and
• the third dielectric layer is in direct contact with the second dielectric layer, the barrier layer, and each of the pair of metal wirings.

A semiconductor device, comprising:

• a pair of spaced-apart metal wirings disposed in a first dielectric layer;
• a second dielectric layer disposed over a portion of the first dielectric layer;
• a third dielectric layer disposed over the plurality of metal wirings and between each of the pair of metal wirings;
• and
• a fourth dielectric layer disposed over the third dielectric layer,
• wherein a portion of the fourth dielectric layer is disposed in the first dielectric layer between the pair of metal wirings and a depth of the fourth dielectric layer in the first dielectric layer is greater than a depth of the second dielectric layer in the first dielectric layer.