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US 10,872,784 B2Granted
Etching gas mixture, method of forming pattern by using the same, and method of manufacturing integrated circuit device by using the etching gas mixture
AssigneesSamsung Electronics Co., Ltd., Wonik Materials
InventorsDo-hoon Kim, Tae-hyung Kim, Jong-min Baek, Han-dock Song
Life of this patent
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Abstract
An etching gas mixture, a method of forming a pattern using the etching gas mixture, and a method of manufacturing an integrated circuit device using the etching gas mixture, the etching gas mixture including a C1-C3 perfluorinated alkyl hypofluorite; and a C1-C10 organosulfur compound that includes a C—S bond in the compound.
Claims17
An etching gas mixture, comprising:
- a C1-C3 perfluorinated alkyl hypofluorite;
- and
- a C1-C10 organosulfur compound that includes a C—S bond,
- wherein the C1-C10 organosulfur compound that includes a C—S bond includes CFS, CF2S, CF3S, C2F4S2 (CAS No. 371-73-3), C2F4S2 (CAS No. 1717-50-6), C2F6S, C2F6S2, C2F6S3, C2F6S4, C2F8S (CAS No. 30341-38-9), C2F8S (CAS No. 1186-51-2), C2F10S (CAS No. 42179-02-2), C2F10S (CAS No. 354-67-6), C3F6S3, C4F16S2, C4F6S (CAS No. 7445-60-5), C4F6S (CAS No. 380-40-5), C4F6S2, C4F8S (CAS No. 706-76-3), C4F8S (CAS No. 2261-43-0), or C6F16S.
1 more element
Dependencies are inferred from the claim text.