Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

An optoelectronic device comprising:

• a patterned dielectric layer, and
• an active zone, which emits and/or absorbs light when the optoelectronic device is in operation, wherein
• the patterned dielectric layer comprises
• a main plane, in which the patterned dielectric layer extends in lateral directions,
• at least one oxide region, which is formed with silicon oxide,
• at least one nitride region, which is formed with silicon nitride of a first type and
• at least one boundary region, which is arranged between the oxide region and the nitride region and directly adjoins the oxide region and the nitride region, and wherein
• the concentration of silicon oxide in the boundary region decreases continuously away from the oxide region and towards the nitride region and/or the concentration of silicon nitride of the first type increases continuously in the boundary region away from the oxide region and towards the nitride region.