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US 10,872,782 B2Granted
Method of manufacturing semiconductor device
AssigneeToshiba Memory Corporation
InventorsYuya Matsubara, Hiroshi Kubota
Life of this patent
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Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film on a substrate. The method further includes forming, on the stacked film, a mask layer formed of a tungsten compound and including impurity atoms having a concentration of 1.0×1020 atoms/cm3 or more. The method further includes etching the stacked film using the mask layer as an etching mask.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a stacked film on a substrate;
- forming, on the stacked film, a mask layer formed of a tungsten compound and including impurity atoms having a concentration of 1.0×1020 atoms/cm3 or more;
- and
- etching the stacked film using the mask layer as an etching mask.
1 more element
Dependencies are inferred from the claim text.