Semiconductor device and a method for fabricating the same

A semiconductor device, comprising:

• an isolation insulating layer;
• a first fin structure and a second fin structures, both protruding from the isolation insulating layer;
• a first gate structure disposed over the first and second fin structures and having a metal gate and a cap insulating layer disposed over the metal gate;
• a first source epitaxial layer disposed over a source region of the first fin structure and a first drain epitaxial layer disposed over a drain region of the first fin structure;
• a second source epitaxial layer disposed over a source region of the second fin structure and a second drain epitaxial layer disposed over a drain region of the second fin structure;
• a first source contact disposed on the first source epitaxial layer;
• a first drain contact disposed on the first drain epitaxial layer;
• a second source contact disposed on the second source epitaxial layer;
• a second drain contact disposed on the second drain epitaxial layer;
• a separation isolation layer continuously disposed between the first source contact and the second source contact, over the first gate structure and between the first drain contact and the second drain contact;
• a first dielectric layer disposed between the separation isolation layer and the isolation insulating layer and between the first and second source epitaxial layers;
• and
• a second dielectric layer disposed between the separation isolation layer and the isolation insulating layer and between the first and second drain epitaxial layers.

A semiconductor device, comprising:

• an isolation insulating layer;
• a first fin structure and a second fin structures, both protruding from the isolation insulating layer;
• a first gate structure disposed over the first and second fin structures and having a metal gate, a cap insulating layer disposed over the metal gate and sidewall spacers;
• a first source epitaxial layer disposed over a source region of the first fin structure and a first drain epitaxial layer disposed over a drain region of the first fin structure;
• a second source epitaxial layer disposed over a source region of the second fin structure and no drain epitaxial layer disposed over a drain region of the second fin structure;
• a first source contact disposed on the first source epitaxial layer;
• a first drain contact disposed on the first drain epitaxial layer;
• a second source contact disposed on the second source epitaxial layer;
• a separation isolation layer continuously disposed between the first source contact and the second source contact, over the first gate structure and between the first drain contact and over the drain region of the second fin structure;
• and
• a dielectric layer disposed between the separation isolation layer and the isolation insulating layer and between the first and second source epitaxial layers.