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US 10,872,772 B2Granted
Semiconductor arrangement and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMatthias Passlack, Martin Christopher Holland
Life of this patent
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Abstract
A semiconductor arrangement includes a semiconductor layer having a source/drain region and a first epitaxial layer over the semiconductor layer. The semiconductor arrangement includes a second epitaxial layer over the first epitaxial layer, wherein the first epitaxial layer and the second epitaxial layer define a contact structure for the source/drain region.
Claims20
A semiconductor arrangement, comprising:
- a semiconductor layer comprising a source/drain region;
- a barrier layer over the semiconductor layer;
- a high-k dielectric layer over the barrier layer;
- a first epitaxial layer over the semiconductor layer, wherein a sidewall of the first epitaxial layer contacts the barrier layer and the high-k dielectric layer;
- a second epitaxial layer over the first epitaxial layer;
- and
- a third epitaxial layer over the second epitaxial layer, wherein the first epitaxial layer, the second epitaxial layer, and the third epitaxial layer define a contact structure for the source/drain region.
4 more elements
A semiconductor arrangement, comprising:
- a semiconductor layer comprising a source/drain region;
- a first epitaxial layer over the semiconductor layer;
- a second epitaxial layer over the first epitaxial layer;
- a dielectric layer overlying the second epitaxial layer;
- and
- a third epitaxial layer overlying the second epitaxial layer and laterally adjacent the dielectric layer, wherein the first epitaxial layer, the second epitaxial layer, and the third epitaxial layer define a contact structure for the source/drain region.
3 more elements
A semiconductor arrangement, comprising:
- a InGaAs layer comprising a source/drain region;
- a first epitaxial layer over the InGaAs layer, wherein the first epitaxial layer comprises germanium;
- a second epitaxial layer over the first epitaxial layer;
- and
- a third epitaxial layer overlying the second first epitaxial layer, wherein:
- the third epitaxial layer comprises silicon, and
- the first epitaxial layer, the second epitaxial layer, and the third epitaxial layer define a contact structure for the source/drain region.
4 more elements
Dependencies are inferred from the claim text.