Haloalkynyl dicobalt hexacarbonyl precursors for chemical vapor deposition of cobalt
AssigneeEntegris, Inc.
InventorsSangbum Han, Seobong Chang, Jaeeon Park, Bryan Clark Hendrix, Thomas H. Baum
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AssigneeEntegris, Inc.
InventorsSangbum Han, Seobong Chang, Jaeeon Park, Bryan Clark Hendrix, Thomas H. Baum
Estimating the term…
The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.
A precursor or precursor composition for a vapor deposition process of a cobalt film, the precursor or precursor composition comprising:
A precursor or precursor composition for a vapor deposition process of a cobalt film, the precursor or precursor composition comprising:
Dependencies are inferred from the claim text.