Method of manufacturing epitaxial silicon wafer, epitaxial silicon wafer, and method of manufacturing solid-state image sensing device

A method of manufacturing an epitaxial silicon wafer, comprising:

• forming a first silicon epitaxial layer having a surface layer portion with an oxygen concentration of 2×1016 atoms/cm3 or less on a silicon wafer that has an oxygen concentration of 2×1017 atoms/cm3 or more:
• irradiating the surface layer portion of the first silicon epitaxial layer with first ions containing carbon to form in the surface layer portion of the first silicon epitaxial layer a first modifying layer in which the carbon is implanted;
• and
• forming a second silicon epitaxial layer on the first modifying layer,
• wherein after the forming the second silicon epitaxial layer, the epitaxial silicon wafer is obtained wherein a peak concentration of an oxygen concentration profile in the first modifying layer is 2×1017 atoms/cm3 or less, and an oxygen concentration of the second silicon epitaxial layer is 2×1016 atoms/cm3 or less, and
• wherein a thickness of the first silicon epitaxial layer is adjusted according to the oxygen concentration of the silicon wafer such that the surface layer portion of the first silicon epitaxial layer has an oxygen concentration of 2×1016 atoms/cm3 or less.