Selective layer formation using deposition and removing
AssigneeASM IP Holding B.V.
InventorsEva Tois, Viljami Pore
Life of this patent
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Abstract
Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.
Claims21
An atomic layer deposition (ALD) process for selectively forming a dielectric material on a first surface of a patterned substrate, comprising:
- providing a substrate comprising a first surface and a second surface, wherein the second surface comprises a passivation layer thereover;
- conducting at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant comprising oxygen;
- wherein the second reactant reacts with the first precursor to form a dielectric material on the first surface;
- and
- wherein the passivation layer is ashed by the second reactant during each deposition cycle.
A cyclical deposition process for selectively a forming a material on a surface of a patterned substrate, comprising:
- providing a substrate comprising a first surface and a second surface, wherein the second surface comprises a passivation layer thereover;
- conducting at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant;
- wherein the second reactant reacts with the first precursor to form the material on the first surface;
- and
- wherein the passivation layer is etched by the second reactant during each deposition cycle.
A plasma enhanced atomic layer deposition (PEALD) process for selectively forming an oxide material on a first dielectric surface of a patterned substrate, comprising:
- providing a substrate comprising a first dielectric surface and a second metallic surface, wherein the second metallic surface comprises an organic passivation layer thereover;
- conducting at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant comprising oxygen and plasma;
- wherein the second reactant reacts with the first precursor to form an oxide material on the first dielectric surface;
- and
- wherein the organic passivation layer is ashed by the second reactant during each deposition cycle.
Dependencies are inferred from the claim text.