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US 10,872,764 B2Granted
Film forming method
AssigneeTokyo Electron Limited
InventorsShinya Iwashita, Takamichi Kikuchi, Naotaka Noro, Toshio Hasegawa, Tsuyoshi Moriya
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Abstract
Disclosed is a film forming method including forming a metal oxide film on a base film by alternately supplying a metal-containing gas and a plasmatized oxidizing gas. The metal-containing gas is changed from a first metal-containing gas having no halogen to a second metal-containing gas different from the first metal-containing gas during the film forming of the metal oxide film.
Claims8
A film forming method comprising:
- forming a first metal oxide film on a base film during a first period of time by alternately supplying a first metal-containing gas and a plasmatized oxidizing gas to the base film;
- and
- forming a second metal oxide film on the first metal oxide film during a second period of time by alternately supplying a second metal-containing gas and the plasmatized oxidizing gas to the first metal oxide film,
- wherein the first metal-containing gas does not include halogen and the second metal-containing gas is different from the first metal-containing gas, and
- wherein the first metal-containing gas and the second metal-containing gas contain a same metal element.
2 more elements
A film forming method comprising:
- forming a metal oxide film on a workpiece using a film forming apparatus including a placing table on which the workpiece is placed and an impedance adjustment circuit provided to adjust an impedance between the placing table and a ground,
- wherein the metal oxide film is formed by:
- forming a first metal oxide film on the workpiece during a first period of time by alternately supplying a first metal-containing gas and a plasmatized oxidizing gas to the workpiece;
- and
- forming a second metal oxide film on the first metal oxide film during a second period of time by alternately supplying a second metal-containing gas and the plasmatized oxidizing gas to the first metal oxide film,
- wherein the impedance adjustment circuit is adjusted such that the impedance changes from a first impedance to a second impedance lower than the first impedance during the film forming of the metal oxide film, and
- wherein the first metal-containing gas and the second metal-containing gas contain a same metal element.
4 more elements
Dependencies are inferred from the claim text.