Methods of forming silicon oxide layer and semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYu-Yun Peng
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Abstract
Methods of forming a silicon oxide layer and a semiconductor structure are disclosed. The method of forming the silicon oxide layer includes the following steps. A silicon-containing precursor, an oxygen-containing precursor and an oxygen radical are provided to form a silicon oxide layer containing water. A thermal process is performed on the silicon oxide layer to diffuse the water into the silicon oxide layer and oxidize the silicon oxide layer by using the water as oxidizer.
Claims20
A method of forming a silicon oxide layer, comprising:
- performing at least one deposition cycle, comprising:
- consistently providing a silicon-containing precursor and an oxygen radical to deposit a flowable silicon oxide layer;
- and
- periodically providing an oxygen-containing precursor and increasing amount of the oxygen radical to form water in the flowable silicon oxide layer;
- and
- performing a thermal process on the flowable silicon oxide layer to diffuse the water into the flowable silicon oxide layer to substantially disperse and insert the water throughout the flowable silicon oxide layer and oxidize the flowable silicon oxide layer by using the water as oxidizer.
A method of forming a silicon oxide layer, comprising:
- providing a silicon-containing precursor and an oxygen radical to deposit a flowable silicon oxide layer;
- providing an oxygen-containing precursor and increasing amount of the oxygen radical to form water in the flowable silicon oxide layer;
- and
- homogeneously diffusing the water into the flowable silicon oxide layer to disperse the water throughout the flowable silicon oxide layer.
A method of forming a semiconductor structure, comprising:
- filling an opening with a silicon oxide layer, wherein a method of forming the silicon oxide layer comprising:
- performing at least one deposition cycle, comprising:
- consistently providing a silicon-containing precursor and an oxygen radical to deposit a flowable silicon oxide layer;
- and
- periodically providing an oxygen-containing precursor and increasing amount of the oxygen radical to form water in the flowable silicon oxide layer;
- and
- performing a thermal process on the flowable silicon oxide layer to homogeneously diffuse the water into the flowable silicon oxide layer to disperse the water throughout the flowable silicon oxide layer and oxidize the flowable silicon oxide layer by using the water as oxidizer.
Dependencies are inferred from the claim text.